Optogan developed unique proprietary technologies of epitaxial crystal growth, chip fabrication, and packaging to enabling the production of high brightness LEDs, LED lamps and LED luminaires with superior performance.
Optogan’s technologies and manufacturing processes are protected by numerous international patents. Our Finish patent group is continuously extending our patent portfolio based on the developments and invention of our engineers and scientists. For additional IP protection, for example, white spots in our patent portfolio are covered by phosphor licences.
Our technology allows highly efficient LEDs with an efficacy of typically above 100 lumens per Watt and reaching over 130 lumens per Watt.
Based on upcoming technology steps further boosts in performance are scheduled in the near future.
The crystal growth, InGaN epitaxy, is our core technology.
Based on the principles of the Nobel Prize winner Professor Zhores I. Alferov, his scientists from the Ioffe Institute in St. Petersburg founded Optogan and patented the epitaxial structures of growing low dislocation heterostructures on gallium nitride (GaN). EpimaxxTM represents the benefits of our epitaxy.
maximum output linearity
maximum chip life time
maximum cost efficiency
Chip technology developed by scientists and engineers from all over Europe and manufactured in Germany enables us to provide leading edge performance that is “made in Germany”.